We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with
โฆ LIBER โฆ
Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films
โ Scribed by E.M. Goldys; M. Godlewski; E. Kaminska; A. Piotrowska; K.S.A. Butcher
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 82 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0370-1972
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A soluble poly(amic acid) precursor solution of fully rod-like poly(p-phenylene pyromellitimide) (PMDA-PDA) was spin cast on silicon substrates, followed by soft bake at 80-185ะC and subsequent thermal imidization at various conditions over 185-400ะC in nitrogen atmosphere to be converted to the pol