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Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry

✍ Scribed by Little, S. A.; Ranjan, V.; Collins, R. W.; Marsillac, S.

Book ID
121701604
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
756 KB
Volume
101
Category
Article
ISSN
0003-6951

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## Abstract Silicon‐germanium (Si~1βˆ’__x__~ Ge__~x~__:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH~4~ and GeH~4~ and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structu