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Graphene masks as passivation layers in the electrochemical etching of silicon

✍ Scribed by Cheng Fang,Joseph George Shapter,Nicolas Hans Voelcker…

Book ID
126358519
Publisher
Springer
Year
2014
Tongue
English
Weight
1007 KB
Volume
49
Category
Article
ISSN
0022-2461

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## Abstract Role of linear nucleation centres (surface grooves) in formation of macro‐pores has been studied for n‐type Si. It has been found that linear nucleation centres, contrary to the case of point nucleation pits, initiate formation of semi‐regular pore pattern: along the grooves the pores a