Low frequency noise investigations for e
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B. Tillack; R. Banisch; F. Januschewski; H.H. Richter; K. HΓΆppner; A. Chovet
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Article
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1993
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Elsevier Science
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English
β 482 KB
Low frequency noise measurements and the characterization of bipolar transistors were used for the evaluation of siliconon-insulator (SOI) films obtained by zone-melting recrystallization (ZMR) and epitaxial Si layers grown on them with regard to bipolar complementary metal-oxide-semiconductor (BICM