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VIA-4 high-quality MOSFETs on silicon films prepared by zone melting recrystallization of encapsulated polysilicon on SiO2

✍ Scribed by Geis, M.W.; Tsaur, B.-Y.; Fan, J.C.C.; Silversmith, D.J.; Mountain, R.W.; Donnelly, J.P.; Maby, E.W.; Antoniadis, D.A.


Book ID
114593940
Publisher
IEEE
Year
1981
Tongue
English
Weight
182 KB
Volume
28
Category
Article
ISSN
0018-9383

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