๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Grain growth of copper films prepared by chemical vapour deposition

โœ Scribed by SA-KYUN RHA; WON-JUN LEE; SEUNG-YUN LEE; DONG-WON KIM; CHONG-OOK PARK

Book ID
110371987
Publisher
Springer US
Year
1997
Tongue
English
Weight
805 KB
Volume
8
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Copper thin films prepared by chemical v
Copper thin films prepared by chemical vapour deposition from copper dipivalylmethanate
โœ T. Maruyama; Y. Ikuta ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Springer ๐ŸŒ English โš– 512 KB

Copper thin films were prepared by a low-temperature atmospheric-pressure chemical vapour deposition method. The raw material was copper dipivalylmethanate which is volatile and thermally stable. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction

Copper thin films prepared by chemical v
Copper thin films prepared by chemical vapour deposition from copper (II) acetylacetonate
โœ T. Maruyama; T. Shirai ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Springer ๐ŸŒ English โš– 493 KB

Copper thin films were prepared by a low-temperature atmospheric pressure chemical vapour deposition method. The raw material was copper (11) acetylacetonate. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity