## Abstract We studied the simultaneous phosphorus and boron diffusion gettering (BDG) of iron in silicon by physical modeling. We present improvements to the previously used models for BDG and phosphorus diffusion gettering (PDG). We show that the improved model is suitable for analyzing the gette
β¦ LIBER β¦
Gold solubility in silicon and gettering by phosphorus
β Scribed by Baldi, L. ;Cerofolini, G. F. ;Ferla, G. ;Frigerio, G.
- Publisher
- John Wiley and Sons
- Year
- 1978
- Tongue
- English
- Weight
- 583 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Mechanisms for phosphorus (P) diffusion gettering (PDG) for iron are supplemented by possible formation of ironβphosphorus complexes in heavy Pβdoped region. Existence of such complexes was recently reported based on the results of electronβspin resonance investigations. DLTS measuremen