GISAXS studies of structural modifications in ion-beam amorphized Ge

✍ Scribed by I.D. Desnica-Franković; P. Dubcek; U.V. Desnica; S. Bernstorff; M.C. Ridgway; C.J. Glover

• Book ID: 104068772
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 940 KB
• Volume: 249
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.03.093

✦ Synopsis

Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74 Ge, from 3 • 10 12 cm À2 to 3 • 10 16 cm À2 ; at room-or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.