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GISAXS study of structural relaxation in amorphous silicon

✍ Scribed by P. Dubček; B. Pivac; S. Bernstorff; R. Tonini; F. Corni; G. Ottaviani


Book ID
114166412
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
141 KB
Volume
200
Category
Article
ISSN
0168-583X

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GISAXS studies of structural modificatio
✍ I.D. Desnica-Franković; P. Dubcek; U.V. Desnica; S. Bernstorff; M.C. Ridgway; C. 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 940 KB

Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74 Ge, from 3 • 10 12 cm À2 to 3 • 10 16 cm À2 ; at room-or liquid nitrogen-temperature, respectively. We have found that