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Ion beam studies of Ge diffusion in

✍ Scribed by E.G. Barbagiovanni; S.N. Dedyulin; P.J. Simpson; L.V. Goncharova


Book ID
113823319
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
505 KB
Volume
272
Category
Article
ISSN
0168-583X

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Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74 Ge, from 3 β€’ 10 12 cm Γ€2 to 3 β€’ 10 16 cm Γ€2 ; at room-or liquid nitrogen-temperature, respectively. We have found that