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Gettering of metal impurities by using phosphorus diffusion in UMG silicon wafers

✍ Scribed by Sung Yean Yoon, Jeong Kim, Kyoon Choi

Book ID
119936875
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
246 KB
Volume
60
Category
Article
ISSN
0374-4884

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Redistribution of Heavy Metal Impurities
Redistribution of Heavy Metal Impurities in Silicon by Phosphorus Diffusion
✍ D. Knoll; A. Fischer πŸ“‚ Article πŸ“… 1982 πŸ› John Wiley and Sons 🌐 English βš– 401 KB πŸ‘ 1 views

## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.