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Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization

✍ Scribed by J. Li; X. Sun; G. Qi; J. Sin; Z. Huang; X. Zeng

Book ID
126652044
Publisher
IEEE
Year
2005
Tongue
English
Weight
249 KB
Volume
26
Category
Article
ISSN
0741-3106

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πŸ“œ SIMILAR VOLUMES

Low temperature polycrystalline silicon
Low temperature polycrystalline silicon film formation by metal induced crystallization with nickel salt derived by ultrasonic spray pyrolysis
✍ Mingfei Yang; Xiao Wei Sun; Hong Yu Yu; Junshuai Li; Junhui Hu πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 148 KB

## Abstract Solution‐based nickel induced crystallization of amorphous silicon (a‐Si) films was performed. The nickel solution was prepared by dissolving (CH~3~CO~2~)~2~Ni in deionized water and applied uniformly on a‐Si films by low‐cost ultrasonic spray pyrolysis method. Crystallization could be