Geometric and electronic structure of molecular beam epitaxy-prepared GaAs (112) and (113) surfaces

✍ Scribed by J. Platen; C. Setzer; P. Geng; W. Ranke; K. Jacobi

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 493 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00136-x

✦ Synopsis

The surface structure ~,nd the electronic properties of the high-index molecular beam epitaxy (MBE)prepared GaAs surfaces (112)A and B as well as (113)A and B were investigated in sire by low-energy electron diffraction and surface core level spectroscopy. Under MBE conditions, both (112) surfaces are unstable. The (112)A surface consists of five kinds of facets with the orientations {110}, {124} and (111)• The (i 12)B surface forms four types of facets with the orientations (111),( 113) and {110}. The surface core-level shift analysis on GaAs(ll2)A yields surface components for the As 3d peak (-0.3!eV) as well as tbr the Ga 3d peak (+0.28eV). On GaAs(II3)A both the (8xl) superstructure and the core-level analysis support a structure model proposed recently by Wassermeier et al. (Phys. Rev. B, 51 (1995) 14721). After MBE preparation, the (113)13 surface forms facets with the orientations {110} and (111). ~(_~ 1997 Elsevier Science Ltd.