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On the electronic and geometric structure of the Si(113) surface

✍ Scribed by U. Myler; K. Jacobi


Publisher
Elsevier Science
Year
1989
Weight
44 KB
Volume
220
Category
Article
ISSN
0167-2584

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The surface structure ~,nd the electronic properties of the high-index molecular beam epitaxy (MBE)prepared GaAs surfaces (112)A and B as well as (113)A and B were investigated in sire by low-energy electron diffraction and surface core level spectroscopy. Under MBE conditions, both (112) surfaces a