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LEED and AES of stoichiometric and arsenic-rich GaAs(110) surfaces prepared by molecular beam epitaxy

✍ Scribed by B. Kübler; W. Ranke; K. Jacobi

Publisher
Elsevier Science
Year
1980
Weight
53 KB
Volume
92
Category
Article
ISSN
0167-2584

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The surface structure ~,nd the electronic properties of the high-index molecular beam epitaxy (MBE)prepared GaAs surfaces (112)A and B as well as (113)A and B were investigated in sire by low-energy electron diffraction and surface core level spectroscopy. Under MBE conditions, both (112) surfaces a