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Generation-recombination noise in MOSFETs

✍ Scribed by Deen, M Jamal; Levinshtein, M E; Rumyantsev, S L; Orchard-Webb, J


Book ID
125854703
Publisher
Institute of Physics
Year
1999
Tongue
English
Weight
190 KB
Volume
14
Category
Article
ISSN
0268-1242

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πŸ“œ SIMILAR VOLUMES


Field-induced generation-recombination n
✍ E.A. Hendriks; R.J.J. Zijlstra πŸ“‚ Article πŸ“… 1988 πŸ› Elsevier Science βš– 358 KB

The spectral noise intensity of the drain current of an n-channel (100) Si-MOSFET in strong inversion was measured as a function of drain current and gate voltage at T = 4.2 K, In addition to flicker noise and white noise it was possible to distinguish a Lorentzian, which was due to generation-recom