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Generalized transconductance and transresistance methods for MOSFET characterization

โœ Scribed by Sanjay Jain


Book ID
103387628
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
938 KB
Volume
32
Category
Article
ISSN
0038-1101

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A commercial metal oxide silicon field effect transistor (MOSFET) dosimeter of model TN502-RD has been characterized for its linearity, reproducibility, field size dependency, dose rate dependency, and angular dependency for Cobalt-60 (60Co), 6-MV, and 15-MV beam energies. The performance of the MOS