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Ge-on-Si for Si-based integrated materials and photonic devices

โœ Scribed by Weixuan Hu; Buwen Cheng; Chunlai Xue; Shaojian Su; Haiyun Xue; Yuhua Zuo; Qiming Wang


Book ID
113099551
Publisher
SP Higher Education Press
Year
2012
Tongue
English
Weight
717 KB
Volume
5
Category
Article
ISSN
2095-2759

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๐Ÿ“œ SIMILAR VOLUMES


GaN-Based Devices on Si
โœ Krost, A. ;Dadgar, A. ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 214 KB
Si-based materials and devices for light
โœ Maria Eloisa Castagna; Salvatore Coffa; Mariantonietta Monaco; Liliana Caristia; ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 259 KB

We report on the fabrication and performances of extremely e cient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1:54 m electroluminescence (EL) at 300 K with a 10% external quantum e ciency, comparable to