GaN-based optoelectronic devices on sapp
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Masayoshi Umeno; Takashi Egawa; Hiroyasu Ishikawa
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Article
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2001
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Elsevier Science
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English
β 242 KB
A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metalsemiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition.