We present a theoretical analysis and results of modeling of a new integrated device for spintronics application, which is based on a hybrid metal-semiconductor structure. The proposed device consists of a Si-based p-i-n photodetector sandwiched between two layers of a ferromagnetic metal (3d ferrom
Design and fabrication of integrated Si-based optoelectronic devices
β Scribed by Sebania Libertino; Salvatore Coffa; Mario Saggio
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 368 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metalsemiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition.
wider (that is, more than three times) than that of an identicallength meander-slot antenna. It is also important to note that the resonant frequency of the proposed antenna is 2.85-GHz lower than that of an identical dimension bow-tie-slot antenna. These results show that the proposed antenna desig