Modeling of magnetically controlled Si-based optoelectronic devices

✍ Scribed by V.K. Dugaev; Yu. Vygranenko; M. Vieira; V.I. Litvinov; J. Barnas

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 98 KB
• Volume: 16
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00646-x

✦ Synopsis

We present a theoretical analysis and results of modeling of a new integrated device for spintronics application, which is based on a hybrid metal-semiconductor structure. The proposed device consists of a Si-based p-i-n photodetector sandwiched between two layers of a ferromagnetic metal (3d ferromagnet or half-metallic compound). Electron-hole pairs are created in the semiconductor part of the structure by light illumination. The photocurrent owing in such a system is shown to depend on its magnetic conÿguration. This is due to a di erence in the specular re ection (as well as in the di use scattering) of spin-up and spin-down electrons and holes from magnetically polarized layers-similar to giant magnetoresistance e ect in magnetic multilayers. This, in turn, allows controlling the device performance by an externally applied magnetic ÿeld. We have estimated magnitude of the e ect and also determined the role of relevant material parameters.