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Gate engineering for deep-submicron CMOS transistors

โœ Scribed by Bin Yu; Dong-Hyuk Ju; Wen-Chin Lee; Kepler, N.; Tsu-Jae King; Chenming Hu


Book ID
114537292
Publisher
IEEE
Year
1998
Tongue
English
Weight
360 KB
Volume
45
Category
Article
ISSN
0018-9383

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Poly-Si gate engineering for advanced CM
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Standard gate materials are compared to Ge implanted poly-Si and deposited poly-SiGe. It is demonstrated in this paper that the electrical resistance of the gate is significantly reduced via the use of poly-SiGe (from 30% to 40% decrease in resistance). Similarly, we show via specific optimization t