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The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

✍ Scribed by F.N. Cubaynes; P.A. Stolk; J. Verhoeven; F. Roozeboom; P.H. Woerlee


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
282 KB
Volume
4
Category
Article
ISSN
1369-8001

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