Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors

Deep-submicron drain current to radio fr

Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits

✍ Benjamin Iñíguez; Jean-Pierre Raskin 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 333 KB

A submicron radio frequency (RF) fully depleted silicon on insulator (SOI) metal oxide semiconductor field-effect transistor (MOSFET) macromodel based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design model for the intrinsic device is presented. Because th