✦ LIBER ✦

Gate-All-Around Nanowire MOSFET With Catalytic Metal Gate For Gas Sensing Applications

✍ Scribed by Gautam, Rajni; Saxena, Manoj; Gupta, R. S.; Gupta, Mridula

Book ID: 121744228
Publisher: IEEE
Year: 2013
Tongue: English
Weight: 641 KB
Volume: 12
Category: Article
ISSN: 1536-125X
DOI: 10.1109/TNANO.2013.2276394

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Gate-All-Around Junctionless Nanowire MO

Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior

✍ Singh, Pushpapraj; Singh, Navab; Miao, Jianmin; Park, Woo-Tae; Kwong, Dim-Lee 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 274 KB

High Aspect Ratio Silicon Nanowire for S

High Aspect Ratio Silicon Nanowire for Stiction Immune Gate-All-Around MOSFETs

✍ Jin-woo Han; Dong-il Moon; Yang-kyu Choi 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 427 KB

Sensitivity of Gate-All-Around Nanowire

Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations—A Comparison With Multigate MOSFETs

✍ Yu-Sheng Wu; Pin Su 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 604 KB

Numerical Model of Gate-All-Around MOSFE

Numerical Model of Gate-All-Around MOSFET With Vacuum Gate Dielectric for Biomolecule Detection

✍ Gautam, Rajni; Saxena, Manoj; Gupta, R. S.; Gupta, Mridula 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 447 KB

Hot-Carrier Reliability of Gate-All-Arou

Hot-Carrier Reliability of Gate-All-Around MOSFET for RF/Microwave Applications

✍ Gautam, Rajni; Saxena, Manoj; Gupta, R. S.; Gupta, Mridula 📂 Article 📅 2013 🏛 IEEE 🌐 English ⚖ 820 KB

Silicon nanowires with lateral uniaxial

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

✍ M. Najmzadeh; L. De Michielis; D. Bouvet; P. Dobrosz; S. Olsen; A.M. Ionescu 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 486 KB

In this work we present for the first time correlation of lateral uniaxial tensile strain and I-V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to exploit the main sources of process-induced strai