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High Aspect Ratio Silicon Nanowire for Stiction Immune Gate-All-Around MOSFETs

โœ Scribed by Jin-woo Han; Dong-il Moon; Yang-kyu Choi


Book ID
126742561
Publisher
IEEE
Year
2009
Tongue
English
Weight
427 KB
Volume
30
Category
Article
ISSN
0741-3106

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Silicon nanowires with lateral uniaxial
โœ M. Najmzadeh; L. De Michielis; D. Bouvet; P. Dobrosz; S. Olsen; A.M. Ionescu ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 486 KB

In this work we present for the first time correlation of lateral uniaxial tensile strain and I-V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to exploit the main sources of process-induced strai