Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled Ar/CF 4 plasma

✍ Scribed by Zhao, Shu-Xia; Gao, Fei; Wang, You-Nian; Bogaerts, Annemie

• Book ID: 120047273
• Publisher: Institute of Physics
• Year: 2012
• Tongue: English
• Weight: 966 KB
• Volume: 22
• Category: Article
• ISSN: 0963-0252
• DOI: 10.1088/0963-0252/22/1/015017