The effects of gas flow rates on the etch characteristics of silicon nitride with an extreme ultra-violet resist pattern in CH2F2/N2/Ar capacitively coupled plasmas

✍ Scribed by B.S. Kwon; J.H. Lee; N.-E. Lee

• Book ID: 118501837
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 649 KB
• Volume: 519
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2010.12.115