✦ LIBER ✦

Gap Shift in Doped Semiconductors at Finite Temperatures

✍ Scribed by F. Thuselt; M. Rösler

Book ID: 104549979
Publisher: John Wiley and Sons
Year: 1985
Tongue: English
Weight: 739 KB
Volume: 130
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.2221300230

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## Abstract Using the Green function methods in the Feynman‐path integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two band‐structure m