Thermoelectric effects of heavily doped semiconductors at low temperatures
β Scribed by H. van Cong; G. Mesnard
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 228 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
## Abstract Using the Green function methods in the Feynmanβpath integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two bandβstructure m
## Abstract Thermomagnetic and adiabatic effects at low temperatures for weak magnetic fields are investigated by a simplified model of heavily doped semiconductors. The treatment is based on the Green's function methods, using the Feynmanβpath integral formulation, applied to disordered systems an
We report about the measurement of the electric characteristics of some NTD Ge thermistors at temperatures down to 25 mK. The dopant concentration is around 6 Γ 10 16 cm Γ3 , producing a material of characteristics close to the metalto-insulator transition. Fitting the rΓ°TΓ characteristics with a va