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Thermoelectric effects of heavily doped semiconductors at low temperatures

✍ Scribed by H. van Cong; G. Mesnard


Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
228 KB
Volume
50
Category
Article
ISSN
0370-1972

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Optical Absorption Edge of Heavily Doped
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## Abstract Using the Green function methods in the Feynman‐path integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two band‐structure m

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We report about the measurement of the electric characteristics of some NTD Ge thermistors at temperatures down to 25 mK. The dopant concentration is around 6 Γ‚ 10 16 cm Γ€3 , producing a material of characteristics close to the metalto-insulator transition. Fitting the rΓ°TÞ characteristics with a va