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Optical Absorption Edge of Heavily Doped Semiconductors at Low Temperatures

✍ Scribed by H. Van Cong; G. Mesnard

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
648 KB
Volume
52
Category
Article
ISSN
0370-1972

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✦ Synopsis

Abstract

Using the Green function methods in the Feynman‐path integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two band‐structure models are used here and the absorption coefficeint is calculated directly from the Greenwood formula in the one‐electron approximation. Two examples concerning Ge and GaAs are discussed assuming that one excess electron is provided by each donor.

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