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Electrical characteristics of heavily doped NTD Ge at very low temperatures

✍ Scribed by M. Barucci; J. Beeman; E. Olivieri; E. Pasca; L. Risegari; G. Ventura

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 345 KB
Volume: 368
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2005.07.008

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✦ Synopsis

We report about the measurement of the electric characteristics of some NTD Ge thermistors at temperatures down to 25 mK. The dopant concentration is around 6 Â 10 16 cm À3 , producing a material of characteristics close to the metalto-insulator transition. Fitting the rðTÞ characteristics with a variable exponent p Mott's law, a p around 0.6 was obtained. This result confirms the hypothesis of a dependence of p on the doping level.

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