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Theory of temperature-dependent knight shift in narrow-gap semiconductors

โœ Scribed by S. Misra; G.S. Tripathi; P.K. Misra


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
274 KB
Volume
110
Category
Article
ISSN
0375-9601

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Temperature-dependent terahertz radiatio
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Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1ร€x Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo