𝔖 Bobbio Scriptorium
✦   LIBER   ✦

GaN reactive ion etching using SiCl4:Ar:SF6chemistry

✍ Scribed by E. Sillero; F. Calle; M. A. Sánchez-García


Book ID
106397328
Publisher
Springer US
Year
2005
Tongue
English
Weight
840 KB
Volume
16
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Reactive ion etching of GaInP/GaAs multi
✍ B. Saint-Cricq; A. Sadeghi; A. Rudra; M. Ilegems 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 634 KB

The reactive ion etching of the GalnP/GaAs multilayer structure using SIC14, CI 2 and Ar was examined. Different plasma compositions were tested and a mixture containing principally SiC14 was chosen. Experiments were performed with power densities between 0.01 and 0.78 W cm -2 and at pressures betwe