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GaN n- and p-type Schottky diodes: Effect of dry etch damage

✍ Scribed by Cao, X.A.; Pearton, S.J.; Dang, G.T.; Zhang, A.P.; Ren, F.; Van Hove, J.M.

Book ID: 114538197
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 123 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.848271

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