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GaN MSM Photodetectors with an Unactivated Mg-Doped GaN Cap Layer and Sputtered ITO Electrodes

✍ Scribed by Lee, K. H.; Chang, P. C.; Chang, S. J.; Yu, C. L.; Wang, Y. C.; Wu, S. L.


Book ID
115498784
Publisher
The Electrochemical Society
Year
2008
Tongue
English
Weight
359 KB
Volume
155
Category
Article
ISSN
0013-4651

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Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was comparably much smaller than that of conventional photodetector without the semi