Nitride-based photodetectors with unactivated Mg-doped GaN cap layer
✍ Scribed by K.T. Lam; P.C. Chang; S.J. Chang; C.L. Yu; Y.C. Lin; Y.X. Sun; C.H. Chen
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 400 KB
- Volume
- 143
- Category
- Article
- ISSN
- 0924-4247
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✦ Synopsis
Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was comparably much smaller than that of conventional photodetector without the semi-insulating layer, due to the facts that inserting a semi-insulating layer would result in a thicker and higher potential barrier. We could also improve the ultraviolet to visible rejection ratio by inserting a semi-insulating Mg-doped GaN cap layer. To sum up, we have determined that the benefits of incorporating a semi-insulating Mg-doped GaN cap layer into the photodetector would encompass larger effective Schottky barrier height, and larger ultraviolet to visible rejection ratio.