Nitride-based photodetectors with unacti
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K.T. Lam; P.C. Chang; S.J. Chang; C.L. Yu; Y.C. Lin; Y.X. Sun; C.H. Chen
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Article
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2008
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Elsevier Science
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English
⚖ 400 KB
Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was comparably much smaller than that of conventional photodetector without the semi