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GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer

✍ Scribed by Weng, W.Y.; Chang, S.J.; Lai, W.C.; Hsueh, T.J.; Shei, S.C.; Zeng, X.F.; Wu, S.L.; Hung, S.C.


Book ID
119804834
Publisher
IEEE
Year
2009
Tongue
English
Weight
114 KB
Volume
21
Category
Article
ISSN
1041-1135

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Nitride-based MIS-like photodetectors with in situ grown 30 nm thick unactivated semi-insulating Mg-doped GaN cap layers were fabricated. It was found that the reverse leakage current of aforementioned photodetector was comparably much smaller than that of conventional photodetector without the semi