GaN MQW microdisks pivoted on Si substrate

✍ Scribed by Choi, H. W. ;Yang, B. L. ;Lai, P. T. ;Chen, P. ;Zhang, X. H. ;Teng, J. H. ;Chua, S. J.

• Book ID: 105364137
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 262 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200673576

✦ Synopsis

Abstract

The fabrication and characterization of GaN MQW microdisks pivoted on Si is reported in this paper. The GaN microdisks were patterned by photolithography and dry‐etched. This is followed by an isotropic wet‐etch process to remove the Si underneath the GaN microdisks, exposing the bottom GaN surface. A Si pillar is left behind to support the microdisk structure. The smooth GaN/air interface provides a reflectivity of ∼20%. Modal features are observed in the photoluminescence spectrum with a mode spacing of ∼1.1 nm. From theoretical predictions whispering gallery (WG) modes are likely to dominate in these microdisks structures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)