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GaN-based HEMTs tested under high temperature storage test

✍ Scribed by D. Marcon; X. Kang; J. Viaene; M. Van Hove; P. Srivastava; S. Decoutere; R. Mertens; G. Borghs

Book ID
113800522
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
577 KB
Volume
51
Category
Article
ISSN
0026-2714

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This paper report on the long-term stress (1000 h) carried out on AlGaN/GaN HEMTs processed on composite SopSiC substrate. Almost all tested devices present good device stability and promising performance. The reliability issues identified during the work are clearly related to the high levels of ga