AlGaN/GaN HEMT Based Hydrogen Sensors With Gate Absorption Layers Formed by High Temperature Oxidation

✍ Scribed by Rýger, I.; Vanko, G.; Kunzo, P.; Lalinský, T.; Vallo, M.; Plecenik, A.; Satrapinský, L.; Plecenik, T.

• Book ID: 122601375
• Publisher: Elsevier
• Year: 2012
• Tongue: English
• Weight: 813 KB
• Volume: 47
• Category: Article
• ISSN: 1877-7058
• DOI: 10.1016/j.proeng.2012.09.198