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GaAsFET Mount Structure Design for 30-GHz-Band Low-Noise Amplifiers

✍ Scribed by Mizuno, H.

Book ID
114657963
Publisher
IEEE
Year
1982
Tongue
English
Weight
414 KB
Volume
30
Category
Article
ISSN
0018-9480

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## Abstract This letter presents the implementation technique to reduce circuit area in designing 2.4 GHz CMOS low‐noise amplifier (LNA) using size efficient inductors. We applied a vertically shunt (M6/M5) and a 3‐D helical inductor to input and output matching network to obtain low noise figure a