Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4–12 GHz Band
✍ Scribed by Aja, B.; Schuster, K.; Schafer, F.; Gallego, J. D.; Chartier, S.; Seelmann-Eggebert, M.; Kallfass, I.; Leuther, A.; Massler, H.; Schlechtweg, M.; Diez, C.; Lopez-Fernandez, I.; Lenz, S.; Turk, S.
- Book ID
- 120363223
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 385 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1531-1309
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract This letter presents the implementation technique to reduce circuit area in designing 2.4 GHz CMOS low‐noise amplifier (LNA) using size efficient inductors. We applied a vertically shunt (M6/M5) and a 3‐D helical inductor to input and output matching network to obtain low noise figure a
## Abstract A dual‐band three‐mode low‐noise amplifier was demonstrated by using 0.35‐μm SiGe BiCMOS technology. For dual‐band applications, a band switching matching network controlled by MOSFET switches was introduced. Through setting On/off of two MOSFET switches, the proper matching networks we
## Abstract A dual‐band (868/915 MHz and 2.4 GHz) low noise amplifier for Zigbee applications is designed using 0.35‐μm CMOS technology.At 868/915 MHz and 2.4 GHz, the gains achieved are both 16 dB and the resulting noise figures are about 2.5 dB and 2.7 dB, respectively. The input and the output r
## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and