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Free exciton emission in GaN

✍ Scribed by Kovalev, D.; Averboukh, B.; Volm, D.; Meyer, B. K.; Amano, H.; Akasaki, I.


Book ID
118018766
Publisher
The American Physical Society
Year
1996
Tongue
English
Weight
97 KB
Volume
54
Category
Article
ISSN
1098-0121

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Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the