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Excitonic emissions from hexagonal GaN epitaxial layers

✍ Scribed by Chichibu, S.; Azuhata, T.; Sota, T.; Nakamura, S.


Book ID
117990831
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
318 KB
Volume
79
Category
Article
ISSN
0021-8979

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## Abstract Nonpolar __m__ ‐plane GaN layers were fabricated by epitaxial lateral overgrowth from etched sapphire sidewalls. The __m__ ‐plane GaN layers with __c__ ‐direction growth were grown from patterned __c__ ‐plane and __a__ ‐plane sapphire substrates with __a__ ‐plane or __c__ ‐plane sidewal