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Formation of ultrathin silicon oxides—modeling and technological constraints

✍ Scribed by Romuald B. Beck


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
241 KB
Volume
6
Category
Article
ISSN
1369-8001

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Characterization of ultrathin ON stacked
✍ A.J. Bauer; E.P. Burte; H. Ryssel 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 687 KB

In this study, a stable process for fabrication of dielectric dual layers consisting of a low pressure thermal oxide layer and a deposited nitride layer for gate dielectric applications was established. The ON (oxide nitride) dual layers were compared to silicon oxide layers up to 5 nm thickness the