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Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

✍ Scribed by Haoues, Hakim; Bouridah, Hachemi; Riad Beghoul, Mahmoud; Mansour, Farida; Remmouche, Riad; Temple-Boyer, Pierre

No coin nor oath required. For personal study only.

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