## Abstract This report presents TEM results obtained on ZnO layers doped with 10% Mn, deposited at 550 °C and subsequently annealed at 800 °C in air. Mn rich precipitates form inside the doped areas and a Mn containing interface phase appears at the ZnO/sapphire interface, following Mn diffusion a
Formation of precipitates in Mn doped ZnO layers deposited by magnetron sputtering
✍ Scribed by Abouzaid, M. ;Ruterana, P. ;Liu, C. ;Morkoç, H.
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 420 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
The precipitation of Mn rich phases in ZnO layers deposited by magnetron sputtering has been investigated as well as the precipitates influence on the magnetic properties. On top of sapphire (0001) substrates, the formation of Mn rich precipitates is observed following the deposition of Zn(Mn)O layers above 500 °C, the size of the precipitates is shown to increase with the Mn concentration. For Zn(Mn)O layers deposited on GaN in similar conditions, no precipitates have been seen to form, however the quality of layers highly improved when the temperature was brought down to 500 °C. At this optimal temperature, the measured magnetic properties are best in layers deposited on both substrates, such layers do not contain any of the observed Mn rich precipitates. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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