Optimization of aluminum-doped ZnO thin-film deposition by magnetron sputtering for liquid crystal display applications
β Scribed by Minami, Tadatsugu ;Miyata, Toshihiro ;Ohtani, Yuusuke
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 236 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
This paper describes the optimization of ZnO:Al (AZO) thin films formed by a magnetron sputtering method for the purpose of creating a substitute for the indiumβtinβoxide (ITO) transparent electrodes used in liquid crystal display (LCD) applications. New AZO thinβfilm preparation techniques for both decreasing resistivity as well as improving resistivity distribution have been investigated: magnetron sputtering deposition in a weakly reducing atmosphere and newly developed highβrate magnetron sputtering deposition techniques. A low resistivity below 5 Γ 10^β4^ Ξ© cm and improvement of the resistivity distribution could be obtained using a commercially available high density sintered AZO target by introducing hydrogen gas into the deposition chamber during depositions with a dc magnetron sputtering method that incorporates rf power. (Β© 2007 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
π SIMILAR VOLUMES
Piezoelectric Nb-doped Pb(Zr,Ti)O 3 thin films (PNZT) were deposited on stainless steel and silicon wafer substrates using RF-magnetron sputtering with the aim of micro-electromechanical systems (MEMS) applications. The obtained films on both kinds of substrates were strongly uniaxially oriented, fo